Chemical Approaches To The Metalorganic CVD Of Group‐III Nitrides

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Metalorganic Vapor Phase Epitaxy (MOVPE)

2.5.2 Group III Nitrides 53 2.5.3 Nov el Alloys 56 2.6 Summary 59 References 60 3 Column III: Phosphides, Arsenides, and Antimonides 71 H. Hardtdegen and M. Mikulics 3.1 Introduction 71 3.2 Precursors for Column III Phosphides, Arsenides, and Antimonides 73 3.3 GaAs‐Based Materials 74 3.3.1 (AlGa)As/GaAs Properties and Deposition 74

Van der Waals Epitaxy of Layered Chalcogenide Films by

Research Interests: Electronic materials synthesis by chemical vapor deposition Thin films Metalorganic chemical vapor deposition of compound semiconductors Wide bandgap materials (Group III-Nitrides and SiC) Hybrid physical-chemical vapor deposition (superconducting MgB 2, Bi 2 Se 3) Low-dimensional structures

Effect of carbon doping on buffer leakage in AlGaN/GaN high

for HEMTs.6 Recent approaches for producing semi-insulating GaN by MBE have included the introduction of deep levels via carbon doping7 9 or beryllium doping.10 Car-bon is an interesting impurity in GaN, as it is one of the most common unintentional impurities in the III-nitrides ~along with oxygen and hydrogen! and because it may show ampho-

Metalorganic Vapor Phase Epitaxy (MOVPE)

CVD Diamond for Electronic Devices and Sensors, Edited by R. S. Sussmann Properties of Semiconductor Alloys: Group IV, III V, and II VI Semiconductors, S. Adachi Mercury Cadmium Telluride, Edited by P. Capper and J. Garland Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, Edited by C. Litton,

Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN

metalorganic chemical vapor deposition (MOCVD) typically have a growth rate (GR) of 2-3 µm/hr 16with N d-N a at low-10 to mid-1015 cm-3 [2, 3]. Therefore, high quality GaN epifilm that can enable vertical GaN power devices with V BR >10 kV is still lacking. Trimethylgallium (TMGa) and ammonia (NH 3) are commonly used as the group III and