Character Of The Cd Distribution In Ultrathin CdSe Layers In A ZnSe Matrix
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Formation of CdSe nanoclusters in SiO thin ﬁlms
CdSe nanoclusters embedded in silicon oxide layers are produced by sequential physical vapor deposition of SiOx x < 1:5ƒand CdSe on crystalline silicon substrates at room temperature. High-resolution electron microscopy is used to prove the formation of CdSe nanoclusters as well as to study their shape, size and structure.
Bound polarons in semiconductor nanostructures
quantum structure the Zn atoms in the ZnSe lattice are ex-changed against Cd atoms. The number of Cd atoms is, how-ever, much smaller than in self-organized grown islands, and not homogeneously distributed like in ZnCdSe mixed crys-tals. The sample scheme is shown in the inset of Fig. 1. First, a ZnSe buffer layer is grown on 4° misoriented GaAs~001!