The Reversal Of The Hall Effect In Alloys

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FABRICATION AND STUDY OF MAGNETIC AND TRANSPORT PROPERTIES OF

Hall Effect (EHE) in magnetic thin films and the Gi ant MagnetoResistance (GMR) in magnetic multilayers reveal the asymmetries of densities of state, scattering probabilities, mean-free paths between spin ­ and spin ¯ channels of conduction electrons in magnetic mater ials.

The quantum spin Hall effect and topological insulators

Hall effect and topological insulators Xiao-Liang Qi and Shou-Cheng Zhang In topological insulators, spin orbit coupling and time-reversal symmetry combine to form a novel state of matter predicted to have exotic physical properties.

Effects of hydrogen on the electronic properties of Ga(AsBi

The effects of hydrogen incorporation on the electronic properties of Ga(AsBi) alloys are investigated in a wide range of Bi-concentration (0.6% x 10.6%) by Hall effect measurements in magnetic fields up to 14T and by photoluminescence spectroscopy. For all the investigated Bi-

Antisymmetric linear magnetoresistance and the planar Hall effect

effect that is deeply entwined with ferromagnetism and demon-strated by early examples in Ni Fe alloys with natural coercivity of a few Oe3,4. The intrinsic magnetization of a ferromagnet permits unusual and rarely observed manifestations of Onsager s theorem when time reversal symmetry is broken at zero applied field3 6.

A Comparative Study between Spin-Transfer-Torque (STT) and

This effect is known as the SHE which arises from the spin-orbit interactions [15]. SHE can provide large enough torque on the adjacent MTJ free layer to switch the magnetization [14]. Traditional SHE devices comprised of a heavy spin Hall metal (SHM) and an MTJ grown on top of the metal [14] Fig. 3: Bidirectional switching of spin Hall effect

Chern number of thin films of the topological insulator Bi2Se3

The quantum spin-Hall effect QSHE is a state of matter originating from spin-orbit coupling, which preserves the time-reversal symmetry. In the QSHE state, the material pos-sesses a bulk energy gap and allows for dissipationless charge transport through gapless spin-filtered edge states. The earliest proposal of the existence of the QSHE was due

Quantum anomalous Hall effect in time-reversal-symmetry

(figure 1(a)). This effect, called the Hall effect, was discovered by Hall in 1879 while he was a student [11]. The Hall effect has been widely used to identify the carrier type, and measure the density and mobility of the carriers in conducting mat-erials, and also provides a direct method to measure magnetic fields.

Spin Orbit Torque Switching in a Nearly Compensated Heusler

additional anomalous Hall effect measurements (Supporting Information), we verified that the magnetization compensation happens between 1 −x = 0.78 and 1 − x = 1. The sign reversal in the anomalous Hall effect signal is a clear evidence for crossover of magnetic moment with zero axis,[18,20] as the Hall resist-

Topological phase transitions in (Bi1 xInx 2Se3 and (Bi1 xSbx

a quantized Hall conductance and the presence of gapless edge modes that are topologically protected by a nonzero Chern number. In 2005, a topological classification was also found to apply to spinful systems with SOC and time-reversal symmetry, defining a topologically nontrivial 2D state known as a quantum spin Hall (QSH) insulator.4,5 A

Topological Hall effect and emergent skyrmion crystal at

through the spin Berry phase mechanism. The resulting Hall effect, known as the topological Hall (TH) effect, has been observed in perovskite oxides [9 12], chiral magnets [13,14], frustrated magnets [15], and Heusler alloys [16 18]. In compounds with heavy elements and without inver-sion symmetry, the antisymmetric spin exchange such as the

Tauber, K., Hoenemann, A., Fedorov, D. V., Gradhand, M

Enhancement of the anomalous Hall effect in ternary alloys Katarina Tauber, 1,* Albert Honemann,¨ Dmitry V. Fedorov,1,2 Martin Gradhand,3 and Ingrid Mertig 2 1Institute of Physics, Martin Luther University Halle-Wittenberg, 06099 Halle, Germany 2Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany

G. Xiao, P. Xiong, and M.Z. Cieplak, Universal Hall Effect

15. B. Raquet, A. Anane, S. Wirth, P. Xiong, and S. von Molnár, Noise Probe of the Dynamic Phase Separation in La 2/3 Ca 1/3 MnO 3 , Physical Review Letters 84, 4485

Anomalous Hall/Nernst Effects in Magnetic Semiconductors and

Anomalous Hall Effect (AHE) ρ xy = 0 + s R B R M AHE from 5 nm-thick (In, Mn)As layer In ferromagnets, ρ. xy. contains two parts: ρ. AH: anomalous or extraordinary Hall effect (AHE) x. y. z. V. y. J. e. B. ¾ρ. xy. exists even if B=0 ¾AHE is more than an order greater than OHE Æρ. xy ~ρ. AH. AHE is not caused by magnetic field, but by

Coercivity of domain-wall motion in thin films of amorphous

Magnetization reversal in thin films of amorphous can substantially reduce the coercivity. Similarly, pres- rare-earth-transition-metal alloys is of considerable impor- ence of spatial variations in the magnetic parameters tance in erasable optical data storage. The success of ther-

Anomalous Hall Effect Magnetometry.magnetics.final

The Hall effect is a very powerful tool for characterizing materials. In addition to the ordinary Hall effect (OHE) that is present in semiconductors and metals, there is an additional voltage proportional to the magnetization1 called the anomalous Hall effect (AHE) in magnetic materials.

Umesh V Waghmare - TIFR

Time Reversal T Broken, Chern Insulators 1. known since 1985 (theoretically) 2. Integer quantum Hall effect with out B! 3. Quantum Anomalous Hall (QAH) insulators 4. No known real examples [?] T-symmetric TIs 1. known since 2005 [Mele and Kane] 2. Z 2 Topological insulators, in 2-D 3. Strong topological insulators, in 3-D

INDEX [onlinelibrary.wiley.com]

Hall effect, 38 39 Hall probe, calibration of, 39 Hard magnetic materials, 18, 477 503 Hard ferrites, 487 488 Head positioners, 500 Heisenberg ferromagnet, 146 Helical spin structure, 169 Helmholtz coils, 26 28 Heusler alloys, 132, 145 Hexagonal ferrites, structure of, 190 192 Hopkinson effect, 205, 323 Hund s Rule, 176 Hydrogen

Antiferromagnetic topological insulators

The time-reversal invariant topological insulators are de-scribed by Z 2 topological invariants i.e., there are only two possible values, odd and even that differ from the integer-valued topological invariants that underlie the integer quantum Hall effect IQHE in two-dimensional time-reversal-breaking systems.

Spin- polarized current and magnetic spin Hall effect in non

In magnetic materials a transverse current distinct from the spin Hall effect can exist Spin-Hall effect can exist without SOC Yang Zhan et al., arxiv:1704.03917 Zelezny et al., PRL 119, 187204 (2017)

Blocking phenomena in granular magnetic alloys through

Blocking phenomena in granular magnetic alloys through magnetization, Hall effect, and magnetoresistance experiments J. C. Denardina) Instituto de Fı´sica Gleb Wataghin, Universidade Estadual de Campinas, Caixa Postal 6165, Campinas 13.083-970 Sa˜o Paulo, Brazil A. B. Pakhomovb)

Role of Spin-Flip Transitions in the Anomalous Hall Effect of

Hall effect (SHE) [2] in solids arise from the opposite anomalous velocities experienced by spin-up and spin-down electrons as they move through the spin-orbit-coupled bands under an applied electric field. In paramagnets, where the bands are spin degenerate, these counterpropagating transverse currents result in a time-reversal conserving

Spin-polarized current and magnetic spin- Hall effect in non

Hall effect in non-collinear The most commonly used antiferromagnets are non-collinear alloys of Mn-Ir Mn Mn 3 Ga, Mn 3 Odd under time-reversal Even under

Manipulation of the magnetization of Perpendicular magnetized

TbCo reversal may be probed using transport measurements S. Alebrand et al., Appl. Phys. Lett. 101 , 162408 (2012) M. Gottwald et al Phys. Rev. B 85, 064403 (2012)

Spin-orbit torque-induced switching in ferrimagnetic alloys

reversal by SOT in these systems. In this work, we study the SOT switching current in CoTb ferrimagnetic alloys with an adjacent W layer. The SOT-induced switching is observed in a wide range of Co and Tb concentrations, even near the magnetic compensation point where a very large reversal field is needed ( 1.3T).

Anomalous Hall conductivity of noncollinear magnetic

It is known that the anomalous Hall effect (AHE) emerges in metals with broken time-reversal symmetry and strong spin-orbit coupling (SOC) [1]. Usually, the AHE is found in ferromagnetic (FM) metals, where a transverse voltage generated by a longitudinal charge current is sensitive to the net magnetization. The intrinsic AHE is driven by a

HALL-EFFECT HCS 1 HCS 10 Characterization HCS 100 Systems

Bismuth-antimony alloys, (Bi 1−xSbx) are binary alloys of bismuth and antimony in various ratios. Some, in particular Bi0.9Sb0.1, were the first experimentally-observed three-dimensio-nal topological insulators, materials that have con-ducting surface states but have an insulating interior. Various BiSb alloys are also used in low temperature

Controlling All‐Optical Helicity‐Dependent Switching in

second laser pulses is investigated using anomalous Hall effect (AHE) measurements of SFi microbars (Figure1a).[12] Through experiment and temperature-dependent micromagnetic simula-tion we determine that the reversal of the SFi is set by the dis-tinct thermal response of the two coupled magnetic layers. A

Enhancement of the anomalous Hall effect in ternary alloys

Enhancement of the anomalous Hall effect in ternary alloys Katarina Tauber, 1,* Albert Honemann,¨ Dmitry V. Fedorov, 1,2 Martin Gradhand, 3 and Ingrid Mertig 2 1 Institute of Physics, Martin Luther University Halle-Wittenberg, 06099 Halle, Germany

Anomalous Hall effect and the role of Berry curvature in ${ m

Hall effect from the perspective of Berry curvature [17]. In recent studies, the anomalous Hall effect was reported in the noncollinear antiferromagnets Mn 3Ge and Mn 3Sn [18,19]. The unconventional anomalous Hall effect in materials with a net-zero magnetic moment is understood in terms of a nonva-nishing Berry curvature [18,19]. Recently, Co

Effects of Hydrogen on the Electronic Properties of Dilute

differs from the effect of hydrogen in other semiconductors where H acts as a passivation agent, but not as a source of doping in its own right. A second puzzling result emerged from experiments by Baldassarri et al. [14] and Polimeni et al. [15] which revealed that postgrowth hydrogenation of InGaAsN alloys can lead to a complete reversal of the

Electrical nucleation and detection of single 360° homochiral

Size dependence of the spin-orbit torque induced magnetic reversal in W/CoFeB/MgO nanostructures Applied Physics Letters 112 , 142410 (2018); 10.1063/1.5022824 Spin-orbit torque-induced switching in ferrimagnetic alloys: Experiments and modeling

Time-Reversal-Breaking Weyl Fermions in Magnetic Heusler Alloys

Time-Reversal-Breaking Weyl Fermions in Magnetic Heusler Alloys the anomalous Hall effect and the PRL 117, 236401 (2016) PHYSICAL REVIEW LETTERS

G Spruce and R D Pringle &RUELQRPHWKRG

Jul 08, 2019 by field reversal G Spruce and R D Pringle-The Hall effect in liquid mercury-gallium alloys A J Crispin and R V Aldridge-Macroscopic properties and electro-optical response of the mixture of ferroelectric liquid crystal DOBAMBC and SmC S S Bawa, A M Biradar and S Chandra-Recent citations Fractal formation of a Y-Ba-Cu-O thin film on SrTiO3

Anomalous Hall effect in paramagnetic two-dimensional systems

the constant Rs is called the anomalous Hall coefficient. It can be seen from the second term above that ferromagnets display a spontaneous Hall conductivity in the absence of an external field. The effect was subsequently noted in a large number of bulk alloys, as well as, in recent experiments, in

Topologicalinsulatorsandsuperconductors

1. Half-quantum Hall effect on the surface 1080 2. Topological magnetoelectric effect 1082 3. Image magnetic monopole effect 1083 4. Topological Kerr and Faraday rotation 1083 5. Related effects 1084 E. Experimental results 1085 1. Material growth 1085 2. Angle-resolved photoemission spectroscopy 1085 3. Scanning tunneling microscopy 1087 4

Transforming Common III V and II VI Semiconductor Compounds

valence and conduction bands at special, time reversal invariant wave vectors in the Brillouin zone. While band inversion per se is not new, and has been recognized long ago in common semi-conductors and semi metals, such as HgTe, [ 1 ] α-Sn, [ 2 ] or PbTe, [ 3 ] what is new is that this effect leads in lower dimensional forms

Pseudo-Hall effect and anisotropic magnetoresistance in a

The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE). The device gives a 50% change in PHE voltage with an ultrahigh sensitivity of 7.3%&' at room temperature. The correlation between the magnetisation, magneto-transport properties, lateral shape of

Three-Dimensional Topological Insulators

Bismuth (Bi) antimony alloys have long been studied for their thermoelectric properties (16). Bi is a semimetal with strong spin-orbit interactions. Its band structure features an indirect negative gap between the valence band maximum at the T point of the bulk BZ and the conduction band minima at three equivalent L points (17).