Influence Of Neutron Irradiation On Optoelectronic Properties Of Structures With The InAs/GaAs Quantum Dots

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Growth and characterisation of InAs/GaAs quantum dots grown

Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD p. 1 Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures p. 5 Comparison of photocurrent spectra of InGaAsN QD and InGaAs QW laser devices p. 9

PAPER OPEN ACCESS Influence of neutron irradiation on

Influence of neutron irradiation on optoelectronic properties of structures with the InAs/GaAs quantum dots N S Volkova 1 , A P Gorshkov 2 , A N Trufanov 3 , L A Istomin 1 , S Levichev 1