Transport And Thermoelectric Properties Of The LaAlO 3 / SrTiO 3 Interface

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Electronic transport and photovoltaic properties in Bi Sr Co

PACS 73.40.-c Electronic transport in interface structures PACS 72.40.+w Photoconduction and photovoltaic effects Abstract Epitaxial heterostructures constructed from the thermoelectric cobalt Bi2Sr2Co2Oy thin films and SrTiO3 as well as SrTi0.993Nb0.007O3 substrates were fabricated by pulsed-laser deposition.

Xuan Gao Curriculum Vitae

fundamental electron transport properties and application prospects (invited review), Journal of Materials Science & Technology, 31, 542-555 (2015). 13) Rui He, Sukrit Sucharitakul*, Zhipeng Ye, Courtney Keiser, T. E. Kidd, X. P.A. Gao, Laser induced oxidation and optical properties of stoichiometric and non-stoichiometric Bi2Te3

Transport and thermoelectric properties of the LaAlO3 SrTiO3

in SrTiO 3/LaAlO 3 interfaces over a wide range of growth conditions [4,17,26 30]. Until the present, most investigations on the elec-tronic properties of LaAlO 3/SrTiO 3 interfaces have been done using transport experiments [1 19,26,29 32], while measurements of thermoelectric power are still sparse in SrTiO 3/LaAlO 3 interfaces [28,33

International Journal of Scientific Research and Reviews

(PLD) technique on SrTiO 3 (STO, 001) with 2-10 uc thickness. LAO has a direct band gap 1.8 eV, which is optimal to separate the photo generated electron-hole pairs. Experimental evidence of electrical properties of the confined electron gas at the LaAlO 3-SrTiO 3 interface is provided by four probe transport measurements.

Controlled nanostructures of atomically thin 2D oxides for

3/20 From 2D interfaces to 2D OxidesQuestions ? Papers published since last review in 2017. Core-level binding energy shifts as a tool to study surface processeson LaAlO 3 /SrTiO 3, Ittipon Fongkaew, Richard Akrobetu, Alp Sehirlioglu, Andrey Voevodind,Sukit Limpijumnong, Walter R.L. Lambrecht, J. Electron Spectrosc. and Rel. Phenom. 218, 21

Xuan Gao Curriculum Vitae

Synthesis, doping, and thermoelectric properties , Journal of Applied Physics, 123, 115109 (2018). This paper was highlighted by the American Institute of Physics (AIP) with a press release.

Viewpoint - Physics

A study of the thermoelectric properties of the doped insulator, strontium titanate, shows that it superconducts with the lowest charge density ever observed. SubjectAreas: Superconductivity, Semiconductor Physics


LaAlO 3/SrTiO 3 interface 12:30 15:00 lunch break SESSION 3 Advanced structural studies of oxides (Chair S. Pantelides) 15:00 15:30 V. Dobrosavljevic Critical role of electronic correlations in determining crystal structure of transition metal compounds 15:30 16:00 D. Kumah Stabilizing Magnetism at Polar Oxide Interfaces

Table of Contents

second moment the study was focused on the transport properties of three terminal devices fabricated by adding a back-gate to the LaAlO 3 /SrTiO 3 interface. Finally, the interplay between the action of light and gate voltage was considered. Experimental findings include the observation and modeling of several effects, with particular

d Electron-Hole Bilayers in CrN MgOð111Þ Multilayers for

All-3d Electron-Hole Bilayers in CrN=MgOð111Þ Multilayers for Thermoelectric Applications Antia S. Botana,1 Victor Pardo,2,3 and Warren E. Pickett1 1Department of Physics, University of California Davis, Davis, California 95616, USA

MAMA-HYBRIDS Multifunctional Hybrids and Organics

LaAlO 3 /SrTiO 3 made by sputter deposition J. Aarts 14.20 - 14.50 Invited Exploring low dimensional transport in SrTiO 3 based heterostructures C. Bell 14.50 - 15.10 Oral Transport properties of LaAlO 3 /SrTiO 3 mesoscopic devices D. Stornaiuolo 15.10 - 15.30 Oral On the origin of the two dimensional electron gas at the polar/non polar

Defects and Stoichiometry of SrTiO3 Films Grown by Pulsed

3 substrates and varied laser fluence. SrTiO 3 has been considered as a dielectric material due to its large room temperature permittivity of ~300, and as a thermoelectric candidate material. SrTiO 3 mobility can be changed by orders of magnitude by doping with cations and oxygen vacancies [5, 6]. SrTiO 3 thin films were grown on NdGaO 3

unctional F xide o interfaces - Cambridge University Press

We now briefl y discuss the interface that is formed in the epitaxial LaAlO 3 /SrTiO 3 (LAO/STO) heterostructure, see Figure 1 , whose extraordinary properties were explored for the fi rst time by Ohtomo and Hwang. 8 We employ this as an Figure 1. Models of heterostructures of lanthanum aluminate between strontium titanate layers.

Effect of Growth Induced (Non)Stoichiometry on the Structure

field effects that result in a dramatic range of transport properties.5−8 More recently, researchers have been doggedly pursuing one of the most exciting discoveries in the study of SrTiO 3 the development of unexpected phenomena at the heterointerface between LaAlO 3 and SrTiO 3. Since the seminal discovery of a

Interfacial Coupling Effect on Electron Transport in MoS2

The interfacial characteristics are found to be highly dependent on the interface termination. With an insulating oxide material, a signicant band gap (0.85eV) is found in MoS 2 /TiO 2 interface

Study of Phononic Contribution in Reduction of Thermal

SrTiO 3 /Nb-doped SrTiO 3 superlattices formed at the Nb-doped layer, when thickness decrease to one unit cell. In the recent work [46] on n-type LaAlO 3 /SrTiO 3, due to electronic confinement at the interface, there is no enhancement of Seebeck effect is observed. Previous


3. Formation of the molecular orbital across the interface: strong AF binding of Cu and Mn spins 4. Orbital repopulation within the Cu e g doublet: hole transfer from a planar x 2-y orbital to the apical z2 5. Charge transfer across the interface: hole depletion on Cu AF enhanced, SC suppressed

Annual report 2014 FOM programme nr. 149 '2-dimensional

Transport and thermoelectric properties of the LaAlO 3 /SrTiO3 interface, 21 st International Conference on 'High Magnetic Fields in Semiconductor Physics', August 3-8, 2014, Panama City Beach, FL, USA.

Metallic and Insulating Interfaces of Amorphous SrTiO -Based

, SrTiO 3, and yttria-stabilized zirconia films. On the other hand, samples of amorphous La 7/8 Sr 1/8 MnO 3 films on SrTiO 3 substrates remain insulating. The interfacial conductivity results from the formation of oxygen vacancies near the interface, suggesting that the redox reactions on the surface of SrTiO 3 substrates play an important role.

Enhanced carrier density in Nb-doped SrTiO3 thermoelectrics

Preparation and thermoelectric properties of heavily Nb-doped SrO ( SrTiO 3 ) 1 epitaxial films J. Appl. Phys. 102, 033702 (2007); 10.1063/1.2764221 High-temperature carrier transport and thermoelectric properties of heavily La- or Nb-doped Sr Ti O 3 single

Glass‐Like Through‐Plane Thermal Conductivity Induced by

LaAlO 3 (001) (LAO) substrates, the oxygen-vacancy-ordered (OVO) planes run parallel to the film/substrate interface, ena-bling out-of-plane expansion, and in-plane compression, to match the substrate.[19a] With a tensile mismatch, such as the −1.8% mismatch produced by SrTiO 3 (001) (STO) substrates,

Giant Oscillating Thermopower at Oxide Interfaces

bottom of the Ti 3 d conduction band. This study is the first direct evidence of a localized Anderson tail in the two-dimensional (2D) electron liquid at the LaAlO 3/SrTiO 3 interface. Introduction The electronic properties of the two-dimensional (2D) electron system found at the LaAlO 3/SrTiO 3 (LAO/STO) interface

Electron mobility in oxide heterostructures

LaAlO 3/SrTiO 3 (LAO/STO) interface [5]. The initial mobil-ity value of 103 cm2 V−1 s−1 of this system was surpassed by replacing the perovskite LaAlO 3 with spinel structured γ-Al 2O 3, which resulted in a record-high electron mobility greater than 105 cm2 versus at 2K [6]. Another system that is well studied is the ZnO/ZnMgO material

Monday Afternoon, October 28, 2013

confined at the interface, the catastrophe can be entirely avoided, and a 2DEG with an electron density of 3.3x1014 cm-2 (0.5 electrons per unit cell) can be generated. However, experimentally observed densities at the STO/LAO interface are more than an order of magnitude lower. We have used a combination of first-principles calculations and

High-Temperature Thermoelectricity in LaNiO3 La2CuO4

3 (LNO) layers with different thicknesses to assess the heterostructure thermoelectric property relationship at high temperatures. We observed that the transport properties depend on the constituent layer thickness, interface intermixing, and oxygen-exchange dynamics in the LCO layers, which occurs at high temperatures.

First-principles modeling of the thermoelectric properties of

First-principles modeling of the thermoelectric properties of SrTiO 3/SrRuO 3 superlattices Pablo Garc´ıa-Fernandez,´ 1Marcos Verissimo-Alves, Daniel I. Bilc,2,3 Philippe Ghosez,2 and Javier Junquera1 1Departamento de Ciencias de la Tierra y F´ısica de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional,

Enhancing the Electron Mobility via Delta-Doping in SrTiO

At the LaAlO. 3 /SrTiO. 3. interface, for example, the transport properties are dramatically changed by subtle variation of growth conditions such as oxygen partial pressure. 8. and LaAlO. 3. thickness. 11. Although the transport properties can be tuned using the electrostatic field effect, the carrier distribution is

Development of thermoelectric oxides for renewable energy

3 d (x ¼ 0, 0.3, 0.4) (M ¼ Co, Mn) were synthesised and characterised concerning their thermoelectric properties in a broad temperature range. It was found that similar to polycrystalline samples the electrical conductivity of LaCoO 3 increases significantly with 40% Ca-substitution due to the formation of Co 4+ ions while the thermopower

Giant oscillating thermopower at oxide interfaces

Understanding the nature of charge carriers at the LaAlO 3/SrTiO 3 interface is one of the and transport properties. thermoelectric voltage signal can be detected experimentally

Lu Li - University of Michigan

Lu Li{CV 4 Diamagnetism and pairing in hole-doped high T c superconductor , Energy Materials Nanotechnology (EMN) West Workshop, Houston 2013 Magnetism of LaAlO 3/SrTiO 3 heterostructure interfaces , Tsinghua University 2012

Large Linear Magnetoresistance in Heavily-Doped Nb:SrTiO 3

magnetism at the interface of SrTiO 3 (STO) with other oxides such as LaAlO 3 and LaTiO 3 1 4, have attracted interest in the properties of STO and doped STO. Conducting Nb-doped STO has also been studied as a potential candidate for creating a high-μ 2DEG by using a δ-doped quantum well structure 5. Previous studies have been

Electron mobility in oxide heterostructures Topical review

LaAlO 3 /SrTiO 3 3(LAO/STO) interface [5]. The initial mobility value of 10 cm2/V s of this system was surpassed by replacing the perovskite LaAlO 3 with spinel structured γ-Al 2 O 3, which resulted in a record-high electron mobility greater than 105 cm2/Vs at 2 K [6]. Another system that is well

ADVERTIMENT. Lʼaccés als continguts dʼaquesta tesi queda

Nb-doped SrTiO 3 on LaAlO 3 substrate and inlet is the BF-STEM image showing the variation of the grain boundaries in the 30, 66 and 200 nm thick films. 70 Figure 4.6. XPS spectra of the different elements in typical film of Nb:STO 71 Figure 4.7 Thermoelectric properties of Nb: SrTiO3 films.

Strain effects on the electronic properties in δ-doped oxide

Strain effects on the electronic properties of (LaTiO 3) 1/(SrTiO 3) N superlattices were investigated using density functional theory. Under biaxial in-plane strain within the range of −5% ≤ ε // ≤ 5%, the d xy orbital electrons are highly localized at the interfaces whereas the d yz and d xz orbital electrons are more distributed in

Nanostructured Thermoelectric Oxides for Energy Harvesting

SrTiO 3 films leads to a prominent reduction in the lattice thermal conductivity without limiting the electrical transport, and hence an improvement in the figure of merit is noticed. Fourth and last, the enhancement of thermoelectric properties of thermally robust, high quality SrTiO 3-based superlattices is discussed. Beside the randomly

Quasiparticle dynamics and spin-orbital texture of the SrTiO

They are most commonly realised at a polar interface to another band insulator LaAlO3, creating a narrow conducting channel that resides solely within the SrTiO 3 8 Similar 2DEGs can also be created by interfacing SrTiO 3 to a wide array of other band or Mott insulators

book 04 TP06 - Wiley-VCH


Thermoelectric La-doped SrTiO3 epitaxial layers with single

In this light, specific La 3+ doping level in SrTiO 3, La x Sr 1-x TiO 3 (LSTO), can result in high values of electrical con - ductivity (up to ~104 S/cm at 300 K), Seebeck coeffi-cient (up to ~1 mV/K at 300 K), thermoelectric power factor (up to ~40 μW cm−1 K−2 at 300 K, larger than those of Bi 2 Te 3 family materials) [4,5], electron mobil-

XRay Writing of Metallic Conductivity and Oxygen Vacancies at

lithography-like writing of a metallic state at the interface between SrTiO. 3. and amorphous Si using X-ray irradiation. Using a combination of transport techniques and in operando photoemission spectroscopy, we reveal in real time that the X-ray radiation induces a transfer of


3.0 1940 1960 1980 2000 2020 FIGURE OF MERIT (ZT) max YEAR Bi 2Te 3 alloy PbTe alloy Si 0.8Ge 0.2 alloy Skutterudites PbSeTe/PbTe Quantum-dot Superlattices (Lincoln Lab) Bi 2Te 3/Sb 2Te 3 Superlattices (RTI) AgPb mSbTe 2+m (Kanatzidis) State-of-the-Art (SOA) in Thermoelectrics SOME BASICS (3)